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IRG7PH42U-EP Datasheet, International Rectifier

IRG7PH42U-EP transistor equivalent, insulated gate bipolar transistor.

IRG7PH42U-EP Avg. rating / M : 1.0 rating-12

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IRG7PH42U-EP Datasheet

Features and benefits


* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM <.

Application


* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.

Image gallery

IRG7PH42U-EP Page 1 IRG7PH42U-EP Page 2 IRG7PH42U-EP Page 3

TAGS

IRG7PH42U-EP
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH42UD-EP
IRG7PH42UD1-EP
IRG7PH42UD1MPBF
International Rectifier

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